HL 10: Devices II
Montag, 22. März 2010, 14:00–15:45, H13
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14:00 |
HL 10.1 |
Ballistic rectification in an asymmetric Si/SiGe cross junction with modulated electron density — •Daniel Salloch, Ulrich Wieser, Ulrich Kunze, and Thomas Hackbarth
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14:15 |
HL 10.2 |
Dot-Field Effect Transistor: Using locally strained silicon for MOSFET applications — •Jürgen Moers, Julian Gerharz, Gregor Mussler, Cleber Biasotto, Vladimir Jovanovic, Lis Nanver, and Detlev Grützmacher
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14:30 |
HL 10.3 |
Ammonium hydroxide (NH4OH) as etch-stop chemical for highly boron-doped silicon δ-layers — •Oliver Hammer, Florian Palitschka, Helmut Lochner, Tina Kubot, Dorota Kulaga-Egger, Daniel Beckmeier, Carolin Axt, Josef Biba, Ronny Schindler, Marc Dressler, Torsten Sulima, and Walter Hansch
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14:45 |
HL 10.4 |
Interface Defect Study by GIDL Current and Charge Pumping Measurements on MOSFET Devices — •Guntrade Roll, Stefan Jakschik, Andre Wachowiak, Matthias Goldbach, and Lothar Frey
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15:00 |
HL 10.5 |
Application of a parameter extraction method for MOSFETs — •Josef Biba, Dorota Kułaga-Egger, Torsten Sulima, and Walter Hansch
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15:15 |
HL 10.6 |
Electrical characterization of doped semiconductor nanostructures with Scanning Microwave Microscopy — •Matthias A. Fenner, Hassan Tanbakuchi, Stephan Streit, Christine Baumgart, Manfred Helm, and Heidemarie Schmidt
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15:30 |
HL 10.7 |
VLS-grown Vertical Silicon Nanowire FETs — •Hesham Ghoneim, Mikael Bjoerk, Heinz Schmid, Kirsten Moselund, Siegfried Karg, Walter Riess, and Heike Riel
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