Regensburg 2010 – scientific programme
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HL: Fachverband Halbleiterphysik
HL 16: Diamond
HL 16.1: Talk
Monday, March 22, 2010, 16:00–16:15, H13
Improved generation of single nitrogen-vacancy centers in diamond by ion implantation — •Boris Naydenov1, Vladimir Richter2, Johannes Beck1, Matthias Steiner1, Gopalakrishnan Balasubramanian1, Jocelyn Achard3, Fedor Jelezko1, Jörg Wrachtrup1, and Rafi Kalish2 — 13 Institute of Physics, University of Stuttgart, Stuttgart Germany — 2Solid State Institute, Technion City, Haifa Israel — 3Laboratoire d'Ingénieurie des Matériaux et des Hautes Pressions, CNRS, F-93430 Villetaneuse, France
Nitrogen-vacancy (NV) centers in diamond have recently attracted the attention of many research groups due to their possible application as quantum bits (qubits), ultra low magnetic field sensors and single photon sources. These color centers can be produced by nitrogen ion implantation, although the yield is usually below 5 % at low ion energies. Here we report an increase of the NV production efficiency by subsequently implanting carbon ions in the area of implanted nitrogen ions. This method improves the production yield by more than 50 %. We also show that very low nitrogen concentration (below 0.1 ppb) in diamond can be determined by converting the intrinsic nitrogen atoms to single NV centers and detecting the latter using a confocal microscope.