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HL: Fachverband Halbleiterphysik

HL 16: Diamond

HL 16.1: Vortrag

Montag, 22. März 2010, 16:00–16:15, H13

Improved generation of single nitrogen-vacancy centers in diamond by ion implantation — •Boris Naydenov¹, Vladimir Richter², Johannes Beck¹, Matthias Steiner¹, Gopalakrishnan Balasubramanian¹, Jocelyn Achard³, Fedor Jelezko¹, Jörg Wrachtrup¹, and Rafi Kalish² — ¹3 Institute of Physics, University of Stuttgart, Stuttgart Germany — ²Solid State Institute, Technion City, Haifa Israel — ³Laboratoire d'Ingénieurie des Matériaux et des Hautes Pressions, CNRS, F-93430 Villetaneuse, France

Nitrogen-vacancy (NV) centers in diamond have recently attracted the attention of many research groups due to their possible application as quantum bits (qubits), ultra low magnetic field sensors and single photon sources. These color centers can be produced by nitrogen ion implantation, although the yield is usually below 5 % at low ion energies. Here we report an increase of the NV production efficiency by subsequently implanting carbon ions in the area of implanted nitrogen ions. This method improves the production yield by more than 50 %. We also show that very low nitrogen concentration (below 0.1 ppb) in diamond can be determined by converting the intrinsic nitrogen atoms to single NV centers and detecting the latter using a confocal microscope.