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HL: Fachverband Halbleiterphysik

HL 57: Focussed Session: ZnO-based Semiconductors

HL 57.11: Vortrag

Donnerstag, 25. März 2010, 17:15–17:30, H17

Charge states of a hydrogen defect (3326 cm⁻¹ line) in ZnO — •Frank Herklotz, Eduard Lavrov, and Jörg Weber — Technische Universität Dresden, 01062 Dresden, Germany

Hydrogen in ZnO is a common impurity that strongly influences its electrical and optical properties, in particular, via formation of shallow donor states [1,2].
An IR absorption study of a H-related defect resulting in a local vibrational mode (LVM) at 3326 cm⁻¹ [3] is presented. We observed that a sub band-gap illumination results in the appearance of an IR absorption line at 3358 cm⁻¹ at the expense of the 3326 cm⁻¹ signal. The results of isotope substitution experiments strongly reveal that the two signals are LVMs of the same defect in different charge states. From the energy of the sub band-gap light it is concluded that this defect has a deep level in the band-gap. Data on thermal stability as well as the transition between the different charge states at different temperatures are also presented. The microscopic nature of the defect will be discussed.

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