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HL: Fachverband Halbleiterphysik
HL 57: Focussed Session: ZnO-based Semiconductors
HL 57.11: Talk
Thursday, March 25, 2010, 17:15–17:30, H17
Charge states of a hydrogen defect (3326 cm−1 line) in ZnO — •Frank Herklotz, Eduard Lavrov, and Jörg Weber — Technische Universität Dresden, 01062 Dresden, Germany
Hydrogen in ZnO is a common impurity that strongly influences its electrical and optical properties, in particular, via formation of shallow donor states [1,2].
An IR absorption study of a H-related defect resulting in a local vibrational mode (LVM) at 3326 cm−1 [3] is presented. We observed that a sub band-gap illumination results in the appearance of an IR absorption line at 3358 cm−1 at the expense of the 3326 cm−1 signal. The results of isotope substitution experiments strongly reveal that the two signals are LVMs of the same defect in different charge states. From the energy of the sub band-gap light it is concluded that this defect has a deep level in the band-gap. Data on thermal stability as well as the transition between the different charge states at different temperatures are also presented. The microscopic nature of the defect will be discussed.
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E.V. Lavrov, F. Herklotz, C.G. Van de Walle, Phys. Rev. B 79, 165210 (2009).
M.D. McCluskey, S.J. Jokela, K.K. Zhuravlev, P.J. Simpson, and K.G. Lynn, Appl. Phys. Lett. 81, 3807 (2002).