Regensburg 2010 – wissenschaftliches Programm
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MA: Fachverband Magnetismus
MA 33: Poster II
MA 33.3: Poster
Freitag, 26. März 2010, 11:00–14:00, Poster B1
Low-voltage gating of ferromagnetic GaMnAs structure — Sam Owen1,2, Joerg Wunderlich1,3, Andrew Irvine2, Zbynek Soban3, Kamil Olejnik1,3, Tomas Jungwirth3, and •Vit Novak3 — 1Hitachi Cambridge Laboratory, Cambridge, UK — 2Microelectronic Research Centre, Cavendish Laboratory, University of Cambridge, UK — 3Institute of Physics ASCR, Praha, Czech Republic
We report on low-voltage control of magnetic properties of a p-n junction field effect transistor via depletion effect in the ferromagnetic semiconductor channel. We show variable Curie temperature and anisotropic magnetoresistance, and demonstrate magnetization switchings induced by short electrical pulses of a few volts. The gatable ferromagnetic device is realized in an all-semiconductor epitaxial structure and offers a pricipally faster operation than the metal-oxide-semiconductor structures reported so far.