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O: Fachverband Oberflächenphysik

O 15: Spin-Orbit Interaction at Surfaces II

O 15.7: Vortrag

Montag, 22. März 2010, 16:30–16:45, H38

Evolution of Topological Edge-States in Bi_1−xSb_x Films on Si(111) — •Hadj Mohamed Benia, Carola Straßer, Klaus Kern, and Christian R. Ast — Max-Planck-Institut für Festkörperforschung, D-70569 Stuttgart, Germany

Due to a semimetal-semiconductor transition in the Bi_1−xSb_x alloy, Bi is transformed into a topological insulator for Sb concentrations larger than 8% [1]. So far, the evolution of the topological states with Sb concentration has only been studied theoretically [2]. We have experimentally investigated the band structure of high quality Bi_1−xSb_x films grown on Si(111) using angular resolved photoemission spectroscopy (ARPES). The evolution of the topological states as function of Sb concentration will be discussed.

[1] D. Hsieh et al. Nature 452, 970 (2008).

[2] L. Fu, C.L. Kane, Phys. Rev. B 76, 45302 (2007).