Regensburg 2010 – scientific programme
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O: Fachverband Oberflächenphysik
O 52: Graphene II
O 52.1: Talk
Wednesday, March 24, 2010, 15:00–15:15, H31
Direct writing of 1 nm thin graphenoid nanoribbons and nanosieves — •Mark Schnietz1, Andrey Turchanin1, Christoph Nottbohm1, André Beyer1, Harun Solak2, Peter Hinze3, Thomas Weimann3, and Armin Gölzhäuser1 — 1Physik supramolekularer Systeme, Fakultät für Physik, Universität Bielefeld — 2Laboratory for Micro and Nanotechnology, Paul Scherrer Insitute, Villigen — 3Physikalisch-Technische Bundesanstalt, Braunschweig
Graphenoid nanosheets are fabricated by electron/photon induced cross-linking of aromatic self-assembled monolayers (SAMs). The cross-linking results in mechanically stable carbon nanosheets with the thickness of a single molecule (∼1 nm) and with a distinct chemical functionality. The nanosheets can be lifted from the substrate and transferred onto another solid substrate or holey structure, where they become free-standing membranes.[1] By vacuum annealing the electrical conductivity of nanosheets can be tuned introducing an insulator to conductor transition.[2] The sizes and shapes of the graphenoid nanosheets are flexibly adjusted by electron beam/EUV interference lithography. In this contribution we demonstrate the fabrication of large area graphenoid nanoribbons and suspended nanosieves with lateral dimensions of the periodic features down to ∼30 nm.[3, 4]
[1] C. T. Nottbohm et al, Ultramicroscopy 108, 88 (2008)
[2] A. Turchanin et al, Adv. Mater. 21, 1233 (2009)
[3] M. Schnietz et al, Small DOI: 10.1002/smll.200901283
[4] C. T. Nottbohm et al, J. Vac. Sci. Technol. B (2009) in press