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O: Fachverband Oberflächenphysik

O 52: Graphene II

O 52.1: Vortrag

Mittwoch, 24. März 2010, 15:00–15:15, H31

Direct writing of 1 nm thin graphenoid nanoribbons and nanosieves — •Mark Schnietz¹, Andrey Turchanin¹, Christoph Nottbohm¹, André Beyer¹, Harun Solak², Peter Hinze³, Thomas Weimann³, and Armin Gölzhäuser¹ — ¹Physik supramolekularer Systeme, Fakultät für Physik, Universität Bielefeld — ²Laboratory for Micro and Nanotechnology, Paul Scherrer Insitute, Villigen — ³Physikalisch-Technische Bundesanstalt, Braunschweig

Graphenoid nanosheets are fabricated by electron/photon induced cross-linking of aromatic self-assembled monolayers (SAMs). The cross-linking results in mechanically stable carbon nanosheets with the thickness of a single molecule (∼1 nm) and with a distinct chemical functionality. The nanosheets can be lifted from the substrate and transferred onto another solid substrate or holey structure, where they become free-standing membranes.[1] By vacuum annealing the electrical conductivity of nanosheets can be tuned introducing an insulator to conductor transition.[2] The sizes and shapes of the graphenoid nanosheets are flexibly adjusted by electron beam/EUV interference lithography. In this contribution we demonstrate the fabrication of large area graphenoid nanoribbons and suspended nanosieves with lateral dimensions of the periodic features down to ∼30 nm.[3, 4]

[1] C. T. Nottbohm et al, Ultramicroscopy 108, 88 (2008)

[2] A. Turchanin et al, Adv. Mater. 21, 1233 (2009)

[3] M. Schnietz et al, Small DOI: 10.1002/smll.200901283

[4] C. T. Nottbohm et al, J. Vac. Sci. Technol. B (2009) in press