DS 48: Ion Interactions with Nano Scale Materials III (Focused Session -- Organisers: Diesing, Facsko)
Donnerstag, 17. März 2011, 16:00–17:30, GER 37
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16:00 |
DS 48.1 |
Topical Talk:
Ion beam doping of semiconductor nanowires — •Carsten Ronning
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16:30 |
DS 48.2 |
Structural investigations of ion beam doped silicon nanowires — •Jörg Grenzer, Olga D. Roshchupkina, Reinhard Kögler, Pratyush Das Kanungo, and Peter Werner
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16:45 |
DS 48.3 |
Evolution of surface topography of Si(001) during ion beam erosion — •Martin Engler, Sven Macko, Frank Frost, and Thomas Michely
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17:00 |
DS 48.4 |
Shadowing in metal assisted ion beam patterning on Si(001) — •Sven Macko, Martin Engler, Frank Frost, and Thomas Michely
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17:15 |
DS 48.5 |
Nanohole Pattern Formation on Ge by Focused Ion Beam and Broad Beam — •Monika Fritzsche, Stefan Facsko, and Kilian Lenz
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