Bereiche | Tage | Auswahl | Suche | Aktualisierungen | Downloads | Hilfe
MA: Fachverband Magnetismus
MA 43: Micro- and Nanostructured Magnetic Materials IV
MA 43.1: Vortrag
Mittwoch, 16. März 2011, 17:00–17:15, HSZ 103
Domain wall resistance between artificial domains created in exchange coupled bilayers by keV He ion bombardment induced magnetic patterning — •Christoph Schmidt, Dieter Engel, and Arno Ehresmann — Department of Physics and Center for Interdisciplinary Nanostructure Science and Technology (CINSaT), University of Kassel, Heinrich-Plett-Str. 40, D-34132 Kassel
Ion bombardment induced lateral magnetic patterning (IBMP) has been used to generate different magnetic patterns (artificial domains) in an exchange bias bilayer system without changes in the surface topography. This technique enables to create adjacent areas with designed magnetization directions stable in remanence. Within the same layer system it is possible to create Bloch or Néel walls. Corresponding magnetical stripe patterns were analyzed by magnetic force microscopy and Kerr microscopy. Magnetoresistance measurements were performed to investigate the domain wall resistance (DWR) at room temperature and low temperatures.