Dresden 2011 – wissenschaftliches Programm

Bereiche | Tage | Auswahl | Suche | Aktualisierungen | Downloads | Hilfe

MA: Fachverband Magnetismus

MA 43: Micro- and Nanostructured Magnetic Materials IV

MA 43.1: Vortrag

Mittwoch, 16. März 2011, 17:00–17:15, HSZ 103

Domain wall resistance between artificial domains created in exchange coupled bilayers by keV He ion bombardment induced magnetic patterning — •Christoph Schmidt, Dieter Engel, and Arno Ehresmann — Department of Physics and Center for Interdisciplinary Nanostructure Science and Technology (CINSaT), University of Kassel, Heinrich-Plett-Str. 40, D-34132 Kassel

Ion bombardment induced lateral magnetic patterning (IBMP) has been used to generate different magnetic patterns (artificial domains) in an exchange bias bilayer system without changes in the surface topography. This technique enables to create adjacent areas with designed magnetization directions stable in remanence. Within the same layer system it is possible to create Bloch or Néel walls. Corresponding magnetical stripe patterns were analyzed by magnetic force microscopy and Kerr microscopy. Magnetoresistance measurements were performed to investigate the domain wall resistance (DWR) at room temperature and low temperatures.