Berlin 2012 – wissenschaftliches Programm
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HL: Fachverband Halbleiterphysik
HL 12: "New" Materials and New Physics in "Old" Materials II
HL 12.8: Vortrag
Montag, 26. März 2012, 13:30–13:45, EW 015
Graphene Solution-Gated Field Effect Transistors for Bioelectronics — •Lucas Hess1, Max Seifert1, Michael Jansen2, Vanessa Maybeck2, Amel Bendali3, Serge Picaud3, Andreas Offenhäusser2, Martin Stutzmann1, Ian D. Sharp1, and Jose A. Garrido1 — 1Walter Schottky Institut, TU München — 2FZ Jülich — 3Institut de la Vision, Paris
For medical applications in neuroprostheses as well as for fundamental research on neuron communication, it is of utmost importance to develop a new generation of electronic devices which can effectively detect the electrical activity of nerve cells. The relatively high electronic noise and the poor stability of silicon biosensors have motivated the search for more suitable materials. In this respect, the outstanding electronic and electrochemical performance of graphene holds great promise for bioelectronic applications.
Here, we report on arrays of graphene solution-gated field effect transistors (G-SGFETs) which can detect the electrical activity of electrogenic cells. G-SGFETs were fabricated using graphene films, which were grown by CVD on Cu and then transferred to insulating substrates where arrays of transistors were processed. We have investigated the ability of these transistors to detect the electrical activity of electrogenic cells. To this end, cardiomyocyte-like HL-1 cells have been cultured on G-SGFET arrays. Employing the transistors beneath, we were able to detect and resolve the action potentials generated by the cells. Our results clearly show that graphene transistors can outperform state-of-the-art devices for bioelectronic applications by far.