Berlin 2012 – wissenschaftliches Programm
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HL: Fachverband Halbleiterphysik
HL 25: Poster Session: GaN - Optical Properties & Preparation and Characterization & Devices
HL 25.14: Poster
Montag, 26. März 2012, 16:00–19:00, Poster D
Low voltage spatially resolved cathodoluminescence measurements on nitride semiconductors — •Matthias Hocker1, Ingo Tischer1, Robert A.R. Leute2, Ferdinand Scholz2, and Klaus Thonke1 — 1Institut für Quantenmaterie, Gruppe Halbleiterphysik, Universität Ulm, 89069 Ulm — 2Institut für Optoelektronik, Universität Ulm, 89069 Ulm
Cathodoluminescence (CL) measurements with very low acceleration voltages can drastically improve spatial resolution. For low electron energies of 550−2000 eV and small working distances of 2−4 mm in the scanning electron microscope, we achieve a spatial resolution down to the diffusion length of the generated excitons. We demonstrate the application of low voltage CL measurements to InGaN quantum wells, and compare the results to Monte Carlo simulations.