Berlin 2012 – wissenschaftliches Programm
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HL: Fachverband Halbleiterphysik
HL 39: ZnO and Relatives II
HL 39.4: Vortrag
Dienstag, 27. März 2012, 12:15–12:30, EW 202
Electrical characterization of proton-irradiated MgZnO thin films — •Florian Schmidt1, Matthias Schmidt1, Holger von Wenckstern1, Daniel Spemann2, and Marius Grundmann1 — 1Universität Leipzig, Institut für Experimentelle Physik II, Abteilung Halbleiterphysik, Linnéstraße 5, 04103 Leipzig — 2Universität Leipzig, Institut für Experimentelle Physik II, Abteilung Nukleare Festkörperphysik, Linnéstraße 5, 04103 Leipzig
Zinc oxide (ZnO) is a semiconductor which is known for its high radiation hardness making the material suitable for space applications. Ternary MgZnO is an excellent material system for the fabrication of quantum well heterostructures and thus for potential application in exciton-related photonic devices. Whereas the influence of proton bombardment on the incorporation of defects in pure ZnO has been reported [1], no data are yet available regarding the exposure of MgZnO to protons. To study the effect of radiation, Mg1−xZnxO thin films with Mg contents of 0 ≤ x ≤ 2 % were irradiated by 2.25 MeV protons with fluences ranging from 1 × 1013 cm−2 to 2 × 1014 cm−2. The samples grown by pulsed-laser deposition were characterized by means of C-V measurements, deep level transient spectroscopy (DLTS) and Laplace DLTS. The proton irradiation generates a deep-level, labelled E4 in the literature, which has been tentatively assigned to the oxygen vacancy [1,2]. The generation rate of the defect in the MgZnO thin films was determined.
[1] F. D. Auret et al., Appl. Phys. Lett., 79(19), 3074 (2001).
[2] T. Frank et al., Appl. Phys. A 88, 141 (2007).