Bereiche | Tage | Auswahl | Suche | Aktualisierungen | Downloads | Hilfe

HL: Fachverband Halbleiterphysik

HL 40: Impurities / Amorphous Semiconductors

HL 40.7: Vortrag

Dienstag, 27. März 2012, 13:00–13:15, EW 015

Diffusion of Cu (I) in amorphous In₂S₃ thin films investigated by Rutherford backscattering spectroscopy — •Albert Juma¹, Paul Pistor¹, Thomas Dittrich¹, and Elke Wendler² — ¹Helmholtz-Centre Berlin for Material and Energy, Hahn-Meitner-Platz 1, 14109 Berlin, Germany — ²Friedrich-Schiller-Universität Jena, Max-Wien-Platz 1, 07743 Jena, Germany

Amorphous In₂S₃ thin films can be used in charge-selective layer systems for example in contact with chalcopyrite absorber or in contact with CuSCN hole conductor. Diffusion of Cu (I) plays a crucial role for the electronic properties of charge-selective contact systems with In₂S₃. In our experiments CuSCN was sprayed as a Cu (I) source on evaporated amorphous In₂S₃ thin films (layer thickness 100 nm) and the annealing temperature was varied and annealing time was fixed. After annealing CuSCN was etched away in pyridine solution. The Cu concentration profiles were obtained from Rutherford backscattering (He⁺) measurements. Temperature dependent diffusion coefficients were deduced from the measurements. The value of the exponential prefactor was of the order of 10⁸ cm²s⁻¹ and the activation energy amounted to about 0.9 eV. A suggestion on the diffusion mechanism will be drawn.