Berlin 2012 – wissenschaftliches Programm
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HL: Fachverband Halbleiterphysik
HL 85: Organic Semiconductors: Transistors and OLEDS
HL 85.1: Vortrag
Donnerstag, 29. März 2012, 15:00–15:15, EW 203
New material combinations for ion gel gated organic thin film transistors — •Johannes Schöck1, Daniel C. Frisbie2, and Heiko B. Weber1 — 1Lehrstuhl für Angewandte Physik, Universität Erlangen-Nürnberg, Erlangen, Germany — 2Department of Chemical Engineering and Materials Science, University of Minnesota, Minneapolis, USA
Ion gels can efficiently gate thin film transistors made from small molecules. Sharing the same benefits as ionic liquids, they are easier to handle and promise better reproducibility. n- and p-type transistors were fabricated from PCBM and custom-made pentacene dimer derivatives. PVdF/[BMP+][FAP-] and PVdF/[EMIm+][TFSi-] ion gels were used as top gates, using P3HT as a standard semiconductor for comparison.