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Berlin 2012 – scientific programme

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HL: Fachverband Halbleiterphysik

HL 85: Organic Semiconductors: Transistors and OLEDS

HL 85.1: Talk

Thursday, March 29, 2012, 15:00–15:15, EW 203

New material combinations for ion gel gated organic thin film transistors — •Johannes Schöck1, Daniel C. Frisbie2, and Heiko B. Weber11Lehrstuhl für Angewandte Physik, Universität Erlangen-Nürnberg, Erlangen, Germany — 2Department of Chemical Engineering and Materials Science, University of Minnesota, Minneapolis, USA

Ion gels can efficiently gate thin film transistors made from small molecules. Sharing the same benefits as ionic liquids, they are easier to handle and promise better reproducibility. n- and p-type transistors were fabricated from PCBM and custom-made pentacene dimer derivatives. PVdF/[BMP+][FAP-] and PVdF/[EMIm+][TFSi-] ion gels were used as top gates, using P3HT as a standard semiconductor for comparison.

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