Berlin 2012 – wissenschaftliches Programm

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KR: Fachgruppe Kristallographie

KR 11: SYRS: Symposium Resistive Switching (joint symposium DS, DF, KR, HL – Organizers: Gemming, Dittmann)

Donnerstag, 29. März 2012, 15:00–17:30, H 0105

	15:00	KR 11.1	Hauptvortrag: Redox-based resistive memories - recent progress — •Rainer Waser
	15:30	KR 11.2	Hauptvortrag: Electric Formation of Metal/SrTiO3 Junctions and its Correlation to Multi-Dimensional Defects — •Dirk C. Meyer, Hartmut Stöcker, Juliane Hanzig, Florian Hanzig, Matthias Zschornak, Barbara Abendroth, and Sibylle Gemming
	16:00	KR 11.3	Hauptvortrag: The Connecting between the Properties of Memristive Material Systems and Application Requirements — •Thomas Mikolajick, Stefan Slesazeck, and Hannes Mehne
	16:30	KR 11.4	Hauptvortrag: Mechanism of resistive switching in bipolar transition metal oxides — •Marcelo Rozenberg
	17:00	KR 11.5	Hauptvortrag: Resistive switching memories: Mechanisms, modeling and scaling — •Daniele Ielmini