Berlin 2012 – scientific programme
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MA: Fachverband Magnetismus
MA 18: Joint Session "Magnetic Semiconductors" (jointly with HL)
MA 18.5: Talk
Tuesday, March 27, 2012, 10:30–10:45, H 0112
Magnetic Mn-Doped Indium Tin Oxide Films Prepared by Vacuum Thermal Evaporation — •Scarlat Camelia1, Xu Qingyu2, Shalimov Artem1, Voelskow Matthias1, Fronk Michael3, Salvan Georgeta3, Zahn R.T. Dietrich3, Helm Manfred1, and Iacomi Felicia4 — 1Helmholtz-Zentrum Dresden-Rossendorf (HZDR), Germany — 2Southeast University, China — 3Semiconductor Physics, Chemnitz University of Technology, Germany — 4Al. I. Cuza University, Iasi, Romania
The optical and electrical properties of indium tin oxide (ITO) thin films are highly dependent on the deposition parameters. Undoped and Mn doped ITO thin films were grown on SiO2/Si substrates by vacuum thermal evaporation (VTE) using different atomic sources ratio. In order to have practically stress-free ITO films, all the samples were annealed at 450∘C for 2 hours in air. The Mn-doped ITO films exhibit room temperature ferromagnetism after annealing. We analyzed the magnetization data from SQUID measurements using simulations based on the Preisach approach and derived the magnetic parameters of superparamagnetic nanoparticles in the Mn-doped ITO films, namely, the magnetization of individual particles and the distribution of coercive fields. The Mn-content in Mn-doped ITO films was investigated by Rutherford backscattering spectrometry and analysed using the RUMP data processing computer code. Results from magneto-optical and magneto-electrical measurements are presented. Magnetotransport measurements reveal negative magnetoresistance, while no anomalous Hall effect is observed.