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MA: Fachverband Magnetismus

MA 18: Joint Session "Magnetic Semiconductors" (jointly with HL)

MA 18.5: Vortrag

Dienstag, 27. März 2012, 10:30–10:45, H 0112

Magnetic Mn-Doped Indium Tin Oxide Films Prepared by Vacuum Thermal Evaporation — •Scarlat Camelia¹, Xu Qingyu², Shalimov Artem¹, Voelskow Matthias¹, Fronk Michael³, Salvan Georgeta³, Zahn R.T. Dietrich³, Helm Manfred¹, and Iacomi Felicia⁴ — ¹Helmholtz-Zentrum Dresden-Rossendorf (HZDR), Germany — ²Southeast University, China — ³Semiconductor Physics, Chemnitz University of Technology, Germany — ⁴Al. I. Cuza University, Iasi, Romania

The optical and electrical properties of indium tin oxide (ITO) thin films are highly dependent on the deposition parameters. Undoped and Mn doped ITO thin films were grown on SiO₂/Si substrates by vacuum thermal evaporation (VTE) using different atomic sources ratio. In order to have practically stress-free ITO films, all the samples were annealed at 450^∘C for 2 hours in air. The Mn-doped ITO films exhibit room temperature ferromagnetism after annealing. We analyzed the magnetization data from SQUID measurements using simulations based on the Preisach approach and derived the magnetic parameters of superparamagnetic nanoparticles in the Mn-doped ITO films, namely, the magnetization of individual particles and the distribution of coercive fields. The Mn-content in Mn-doped ITO films was investigated by Rutherford backscattering spectrometry and analysed using the RUMP data processing computer code. Results from magneto-optical and magneto-electrical measurements are presented. Magnetotransport measurements reveal negative magnetoresistance, while no anomalous Hall effect is observed.