Berlin 2012 – scientific programme
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O: Fachverband Oberflächenphysik
O 35: Poster Session II (Polymeric biomolecular films; Nanostructures; Electronic structure; Spin-orbit interaction; Phase transitions; Surface chemical reactions; Heterogeneous catalysis; Particles and clusters; Surface magnetism; Electron and spin dynamics; Surface dynamics; Methods; Electronic structure theory; Functional molecules)
O 35.33: Poster
Tuesday, March 27, 2012, 18:15–21:45, Poster B
Formation of an ideal Schottky barrier by Au/n-type β-Ga2O3 — •Mansour Mohamed1, Christoph Janowitz1, Klaus Irmscher2, and Recardo Manzke1 — 1Institute of Physics, Humboldt University of Berlin, Newtonstr. 15, D-12489 Berlin, Germany — 2Leibniz Institute for Crystal Growth, Max-Born-Str. 2, D - 12489 Berlin, Germany
High resolution angular-resolved photoelectron spectroscopy (ARPES) was applied to study the formation of a Schottky barrier on cleaved β-Ga2O3 single crystals with a carrier concentration of 6x1016 cm−3, which were grown by the Czochralski method. A coverage-dependent surface photovoltage effect induced by the synchrotron radiation was observed. The shift of the valence band- and semicore- states at low Au- coverage and the work functions of Au and β-Ga2O3 were determined in situ by ARPES. From these experimental data the Schottky barrier height was found to be 1.01 eV in nearly perfect agreement to the value of 1.07 eV obtained from the current-voltage characteristics. The system Au/n-type β-Ga2O3 matches nearly ideally the characteristics of a pure Schottky barrier.