Berlin 2012 – scientific programme
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O: Fachverband Oberflächenphysik
O 51: Oxides and insulators: Epitaxy and growth
O 51.6: Talk
Wednesday, March 28, 2012, 18:00–18:15, HE 101
In-situ XRD and XRR investigations of the oxidation process in ultra thin praseodymia films on Si(111) — •Henrik Wilkens1, Sebastian Gevers1, Marvin H. Zoellner2, Thomas Schroeder2, and Joachim Wollschläger1 — 1Fachbereich Physik, Universität Osnabrück, Barbarastr. 7, 49069 Osnabrück, Germany — 2IHP, Im Technologiepark 25, 15236 Frankfurt (Oder), Germany
Due to its high dielectric constant and lattice constant between Ge and Si, praseodymia is an interesting buffer material for system on chip solutions (SOC). To build these praseodymia based systems, a detailed analysis of the various oxidation states and reaction kinetics in thin films is necessary.
Therefore, time-resolved in-situ x-ray diffraction (XRD) and x-ray reflection (XRR) measurements with an in-house built pressure cell were performed at the synchrotron beamlines W1 and P08 at HASYLAB, DESY. The oxidation and reduction process in oxygen atmosphere were studied over a wide pressure range from 1·10−6 mbar to 1 bar and temperatures up to 500∘ C.
As a first result additional oxidation states in the region between cub-Pr2O3 and cub-Pr6O11 were found, which haven’t been observed in thin films up to now. Furthermore, the oxygen partial pressure seems to have larger impact on the reached oxidation state than the temperature.