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O: Fachverband Oberflächenphysik

O 51: Oxides and insulators: Epitaxy and growth

O 51.6: Vortrag

Mittwoch, 28. März 2012, 18:00–18:15, HE 101

In-situ XRD and XRR investigations of the oxidation process in ultra thin praseodymia films on Si(111) — •Henrik Wilkens¹, Sebastian Gevers¹, Marvin H. Zoellner², Thomas Schroeder², and Joachim Wollschläger¹ — ¹Fachbereich Physik, Universität Osnabrück, Barbarastr. 7, 49069 Osnabrück, Germany — ²IHP, Im Technologiepark 25, 15236 Frankfurt (Oder), Germany

Due to its high dielectric constant and lattice constant between Ge and Si, praseodymia is an interesting buffer material for system on chip solutions (SOC). To build these praseodymia based systems, a detailed analysis of the various oxidation states and reaction kinetics in thin films is necessary.
Therefore, time-resolved in-situ x-ray diffraction (XRD) and x-ray reflection (XRR) measurements with an in-house built pressure cell were performed at the synchrotron beamlines W1 and P08 at HASYLAB, DESY. The oxidation and reduction process in oxygen atmosphere were studied over a wide pressure range from 1·10⁻⁶ mbar to 1 bar and temperatures up to 500^∘ C.
As a first result additional oxidation states in the region between cub-Pr₂O₃ and cub-Pr₆O₁₁ were found, which haven’t been observed in thin films up to now. Furthermore, the oxygen partial pressure seems to have larger impact on the reached oxidation state than the temperature.