Berlin 2012 – wissenschaftliches Programm
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O: Fachverband Oberflächenphysik
O 58: Poster Session III (Solid/liquid interfaces; Metals; Semiconductors; Oxides and insulators)
O 58.46: Poster
Mittwoch, 28. März 2012, 18:15–21:45, Poster B
Preparation and in-situ analysis of MOVPE-prepared Si(111) surfaces — •Thomas Haensel1, Weihong Zhao1, Henning Döscher1,2, Sebastian Brückner1, Peter Kleinschmidt3, Oliver Supplie2, Matthias M. May2, and Thomas Hannappel1,3 — 1Technische Universität Ilmenau, Institut für Physik, Fachgebiet Photovoltaik, Gustav-Kirchhoff-Straße 5, D-98684 Ilmenau — 2Helmholtz-Zentrum Berlin für Materialien und Energie, Hahn-Meitner-Platz 1, D-14109 Berlin — 3CiS Forschungsinstitut für Mikrosensorik und Photovoltaik GmbH, Konrad-Zuse-Straße 14, D-99099 Erfurt
III-V nanowires are one example for new solar cell concepts aiming at high efficiency. Compared to III-V wafers, silicon substrates benefit from low cost and mature high quality manufacturing. Generally, III-V nanowires are prepared on {111} surfaces. While the preparation of pristine Si(111) is well-established in ultra-high vacuum (UHV), little is known about the preparation of Si(111) surfaces grown in metal organic vapor phase epitaxy (MOVPE) ambient. A contamination-free transfer system enables us to relate in situ reflection anisotropy spectroscopy (RAS) and UHV based techniques such as scanning tunneling microscopy (STM), low energy electron diffraction (LEED) and X-ray photoelectron spectroscopy (XPS). Similarly, we analyzed the nucleation of GaP on Si(111).