Berlin 2012 – wissenschaftliches Programm
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O: Fachverband Oberflächenphysik
O 58: Poster Session III (Solid/liquid interfaces; Metals; Semiconductors; Oxides and insulators)
O 58.47: Poster
Mittwoch, 28. März 2012, 18:15–21:45, Poster B
Double layer steps on Silicon(100) prepared in H2 ambient — •Wei Hong Zhao2, Johannes Luczak1, Peter Kleinschmidt1,3, Sebastian Brückner1,2, Henning Döscher1,2, Oliver Supplie1, and Thomas Hannappel1,2,3 — 1Helmholtz-Zentrum Berlin, Institut Solare Brennstoffe und Energiespeichermaterialien, D-14109 Berlin — 2TU Ilmenau, Institut für Physik, Fachgebiet Photovoltaik, D-98693 Ilmenau — 3CiS Forschungsinstitut für Mikrosensorik und Photovoltaik, D-99099 Erfurt
Preparation of double-layer steps is important for heteroepitaxial growth of III-V semiconductors on Si(100). Single-layer steps on Si(100) are associated with the presence of two domains with different dimer orientations on the reconstructed surface, leading to the initiation of anti-phase domains (APDs) in the epitaxial III-V layer. Our process consists of deoxidation, homoepitaxial growth employing silane, annealing and cooling in hydrogen ambient. We studied the surface structure using Fourier-transform infrared spectroscopy, low-energy electron diffraction and scanning tunneling microscopy (STM). STM measurements on Si(100) show the formation of DA and DB - double-steps on a surface with an intermediate offcut of 2∘ in [011] direction dependent on cooling procedere. The STM images on 6∘ misoriented samples revealed a preference for DB double layer steps.