Berlin 2012 – scientific programme
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O: Fachverband Oberflächenphysik
O 58: Poster Session III (Solid/liquid interfaces; Metals; Semiconductors; Oxides and insulators)
O 58.51: Poster
Wednesday, March 28, 2012, 18:15–21:45, Poster B
III-V on Si(100) for photoelectrocatalysis — •Matthias M. May1,2, Oliver Supplie1,2, Henning Döscher1, Sebastian Fiechter1, Hans-J. Lewerenz1,3, Klaus Schwarzburg1, and Thomas Hannappel1,4,5 — 1Helmholtz-Zentrum Berlin, Institut Solare Brennstoffe und Energiespeichermaterialien, D-14109 Berlin — 2Humboldt-Universität zu Berlin, Institut für Physik, D-12489 Berlin — 3California Institute of Technology, Pasadena, USA — 4TU Ilmenau, Institut für Physik, Fachgebiet Photovoltaik, D-98693 Ilmenau — 5CiS Forschungsinstitut für Mikrosensorik und Photovoltaik, D-99099 Erfurt
III-V semiconductors on Si(100) represent possible candidates for photoelectrochemical splitting of H2O. InP grown by MOVPE has proven to be a promising photocathode for H2 evolution [1]. GaP is closely related to InP and can be grown on Si(100) [2] combining a III-V semiconductor with the inexpensive Si substrate. Lattice match and band gap engineering can be achieved via incorporation of e.g. N [3]. This heteroepitaxial system also opens the possibility of a monolithically integrated photoelectrochemical tandem device addressing both hydrogen and oxygen evolution. First experiments investigating the fundamental properties regarding surface chemistry and topography of these III-V systems on Si are presented.
[1] Lewerenz et al., Energy Environ. Sci. 3 (2010)
[2] Döscher et al., J. Appl. Phys. 107, 123523 (2010)
[3] Shan et al., Phys. Status Solidi B 223, (2001)