Parts | Days | Selection | Search | Updates | Downloads | Help

O: Fachverband Oberflächenphysik

O 58: Poster Session III (Solid/liquid interfaces; Metals; Semiconductors; Oxides and insulators)

O 58.51: Poster

Wednesday, March 28, 2012, 18:15–21:45, Poster B

III-V on Si(100) for photoelectrocatalysis — •Matthias M. May^1,2, Oliver Supplie^1,2, Henning Döscher¹, Sebastian Fiechter¹, Hans-J. Lewerenz^1,3, Klaus Schwarzburg¹, and Thomas Hannappel^1,4,5 — ¹Helmholtz-Zentrum Berlin, Institut Solare Brennstoffe und Energiespeichermaterialien, D-14109 Berlin — ²Humboldt-Universität zu Berlin, Institut für Physik, D-12489 Berlin — ³California Institute of Technology, Pasadena, USA — ⁴TU Ilmenau, Institut für Physik, Fachgebiet Photovoltaik, D-98693 Ilmenau — ⁵CiS Forschungsinstitut für Mikrosensorik und Photovoltaik, D-99099 Erfurt

III-V semiconductors on Si(100) represent possible candidates for photoelectrochemical splitting of H₂O. InP grown by MOVPE has proven to be a promising photocathode for H₂ evolution [1]. GaP is closely related to InP and can be grown on Si(100) [2] combining a III-V semiconductor with the inexpensive Si substrate. Lattice match and band gap engineering can be achieved via incorporation of e.g. N [3]. This heteroepitaxial system also opens the possibility of a monolithically integrated photoelectrochemical tandem device addressing both hydrogen and oxygen evolution. First experiments investigating the fundamental properties regarding surface chemistry and topography of these III-V systems on Si are presented.

[1] Lewerenz et al., Energy Environ. Sci. 3 (2010)

[2] Döscher et al., J. Appl. Phys. 107, 123523 (2010)

[3] Shan et al., Phys. Status Solidi B 223, (2001)