Regensburg 2013 – wissenschaftliches Programm

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HL: Fachverband Halbleiterphysik

HL 100: Resistive switching (DS, jointly with DF, HL, KR)

HL 100.12: Vortrag

Freitag, 15. März 2013, 12:30–12:45, H32

Lattice dynamics in Sb- and Te-based phase-change materials — •Ronnie Ernst Simon^1,2, Ilya Sergueev³, and Raphaël Pierre Hermann^1,2 — ¹Jülich Centre for Neutron Science JCNS and Peter Grünberg Institut PGI, Jara-FIT Forschungszentrum Jülich GmbH, D-52425 Jülich, Germany — ²Faculté des Sciences, Univer- sité de Liège, B-4000 Liège, Belgium — ³Deutsches Elektronen- Syn- chrotron, D-22607 Hamburg, Germany

Phase-change materials exhibit a significant change of the optical reflectivity and electrical resistivity upon crystallization which renders these materials applicable for optical storage devices and non-volatile electronic memories. In order to understand the switching kinetics between the amorphous and the metastable crystalline states a detailed knowledge of the lattice dynamics of the different phases is crucial. A suitable technique for the investigation of lattice dynamics is nuclear inelastic scattering (NIS) which gives access to the element specific density of phonon states (DPS). We performed NIS measurements in Sb- and Te-based phase-change materials in the amorphous and crystalline phases. We have recently extended the experimental possibilities by demonstrating the feasibility of high pressure NIS measurements, up to 75 GPa, in Sb₂Te₃ . The ESRF is acknowledged for the provision of synchrotron radiation beamtime at ID18.