Bereiche | Tage | Auswahl | Suche | Aktualisierungen | Downloads | Hilfe

HL: Fachverband Halbleiterphysik

HL 5: Spintronics: mainly interfaces and heterostructures

HL 5.2: Vortrag

Montag, 11. März 2013, 09:45–10:00, H16

Anisotropy at the Fe/GaAs(001) interface - resistance and AMR-effect — •Thomas Hupfauer¹, Alex Matos-Abiague², Bernhard Endres¹, Matthias Sperl¹, Georg Woltersdorf¹, Martin Utz¹, Dieter Schuh¹, Dominique Bougeard¹, Christian Back¹, Jaroslav Fabian², and Dieter Weiss¹ — ¹Institute of Experimental and Applied Physics, University of Regensburg, 93040 Regensburg, Germany — ²Institute of Theoretical Physics, University of Regensburg, 93040 Regensburg, Germany

We investigate transport anisotropies at Fe/GaAs interfaces. These experiments were motivated by theoretical calculations derived from a spin-orbit-field model for the TAMR-effect [1,2] which was applied to the case of lateral transport. Samples with an epitaxially grown Fe-layer consisting of six monolayers were investigated. The measurements show an anisotropy of the conductance dependent on the crystallographic axes of the GaAs, featuring a maximum along the [110]-direction and a minimum in [110]. Additionally the strength of the AMR-effect is also dependent on the crystallographic axes, showing maxima in both [110]- and [110]-directions, with the maximum in [110] being somewhat larger. This behavior could be reproduced by the theoretical model. Financial support by DFG via SFB 689 is gratefully acknowledged.

[1] M. Wimmer, et al., Phys. Rev. B 80, 121301(R) (2009)

[2] J. Moser, et al., Phys. Rev. Lett. 99, 056601 (2007)