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HL: Fachverband Halbleiterphysik

HL 68: Poster Session: GaN: devices & preparation & characterization; III-V semiconductors; Photonic crystals; Semiconductor lasers

HL 68.10: Poster

Mittwoch, 13. März 2013, 16:00–20:00, Poster A

Dislocation related luminescence properties in multiple InGaN quantum well structures — •Manuel Frey¹, Ingo Tischer¹, Matthias Hocker¹, Dario Schiavon², Matthias Peter², and Klaus Thonke¹ — ¹Institut für Quantenmaterie, Gruppe Halbleiterphysik, Universität Ulm, 89081 Ulm — ²OSRAM Opto Semiconductors GmbH, Leibnizstraße 4, 93055 Regensburg, Germany

The development of InGaN/GaN quantum well structures during the last years resulted in green LEDs with high quantum efficiency.
The indium content and the strain in the InGaN layers increases with the growing number of QWs. Among others, the density of threading dislocations and stacking faults increases leading to V-pit formation when a critical thickness of the QWs is exceeded.
Spatially and spectrally resolved low voltage cathodoluminescence measurements on multiple InGaN/GaN based QWs allow to determine the effect of dislocations and strain on the luminescence properties of multiple QW samples.