Regensburg 2013 – wissenschaftliches Programm

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O: Fachverband Oberflächenphysik

O 13: Focus Session: Crystalline n-type semiconducting oxides - SnO₂, Ga₂O₃, and In₂O₃ for novel devices (jointly with HL)

O 13.2: Vortrag

Montag, 11. März 2013, 15:30–15:45, H2

Anisotropic dielectric function and carrier density of rutile SnO₂ — •Christian Lidig¹, Karsten Lange¹, Martin Feneberg¹, Maciej Neumann², Norbert Esser², Mark E. White³, Min-Ying Tsai³, Oliver Bierwagen^3,4, James S. Speck³, and Rüdiger Goldhahn¹ — ¹Otto-von-Guericke-Universität Magdeburg, Institut für Experimentelle Physik, Abteilung für Materialphysik — ²Leibniz-Institut für Analytische Wissenschaften - ISAS - e.V. , Berlin — ³University of California, Santa Barbara, USA — ⁴Paul-Drude-Institut, Berlin

The anisotropic dielectric function of rutile SnO₂ is presented from 0.04 eV up to 20 eV. The results were obtained on a sample grown on TiO₂ having the optical axis in plane. After modelling the layer stack and taking surface roughness into account, the full dielectric function is extracted wich is compared with theoretical calculations. It turns out that electron-hole interaction influences the dielectric function up to 20 eV resulting in a pronounced redshift and redistribution of oscillator strength of features related to van Hove singularities.
Additionally, infrared spectroscopic ellipsometry was performed on a series of SnO₂:Sb layers grown on r-plane sapphire. The plasmon- longitudinal optical phonon- coupling modes yield results for the free carrier concentrations which are discussed in detail.