Regensburg 2013 – scientific programme
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O: Fachverband Oberflächenphysik
O 68: Graphene: Preparation and Characterization I (jointly with HL, MA and TT)
O 68.1: Talk
Thursday, March 14, 2013, 10:30–10:45, H17
Synthesis of graphene on (6 √3 × 6 √3)R30∘ reconstructed SiC surfaces by molecular beam epitaxy — •Timo Schumann1, Martin Dubslaff1, Myriano H. Oliveira Jr.1, Michael Hanke1, Felix Fromm2, Thomas Seyller2,3, J. Marcelo J. Lopes1, and Henning Riechert1 — 1Paul-Drude-Institut für Festkörperelektronik, Berlin, Germany — 2Lehrstuhl für Technische Physik, Friedrich-Alexander-Universitt Erlangen-Nürnberg, Erlangen, Germany — 3Institut für Physik, Technische Universität Chemnitz, Chemnitz, Germany
We report on the synthesis of graphene on a (6 √3 × 6 √3)R30∘ reconstructed SiC(0001) surface (a.k.a. buffer layer) by means of molecular beam epitaxy (MBE). Raman spectroscopy reveals that the quality of the MBE-grown graphene films increases with growth time and that the average crystallite size exceeds 20 nm. X-ray photoelectron spectroscopy confirms that the thickness of the films increases as a function of the growth time and proves that the buffer layer is preserved during the growth process. In addition, grazing-incidence X-ray diffraction measurements were performed at the beamline ID10 of the ESRF in Grenoble. In-plane reflections of the buffer layer, the SiC, as well as from the MBE-synthesized graphene, were investigated. Strikingly, despite their nanocrystalline nature, it is observed that the graphene films grown by MBE show an in-plane alignment to the substrate, revealing that a conventional epitaxial growth on the buffer layer takes place. The results will be discussed in the context of MBE growth of graphene considering the most recent data reported in the literature.