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O: Fachverband Oberflächenphysik

O 68: Graphene: Preparation and Characterization I (jointly with HL, MA and TT)

O 68.1: Vortrag

Donnerstag, 14. März 2013, 10:30–10:45, H17

Synthesis of graphene on (6 √3 × 6 √3)R30^∘ reconstructed SiC surfaces by molecular beam epitaxy — •Timo Schumann¹, Martin Dubslaff¹, Myriano H. Oliveira Jr.¹, Michael Hanke¹, Felix Fromm², Thomas Seyller^2,3, J. Marcelo J. Lopes¹, and Henning Riechert¹ — ¹Paul-Drude-Institut für Festkörperelektronik, Berlin, Germany — ²Lehrstuhl für Technische Physik, Friedrich-Alexander-Universitt Erlangen-Nürnberg, Erlangen, Germany — ³Institut für Physik, Technische Universität Chemnitz, Chemnitz, Germany

We report on the synthesis of graphene on a (6 √3 × 6 √3)R30^∘ reconstructed SiC(0001) surface (a.k.a. buffer layer) by means of molecular beam epitaxy (MBE). Raman spectroscopy reveals that the quality of the MBE-grown graphene films increases with growth time and that the average crystallite size exceeds 20 nm. X-ray photoelectron spectroscopy confirms that the thickness of the films increases as a function of the growth time and proves that the buffer layer is preserved during the growth process. In addition, grazing-incidence X-ray diffraction measurements were performed at the beamline ID10 of the ESRF in Grenoble. In-plane reflections of the buffer layer, the SiC, as well as from the MBE-synthesized graphene, were investigated. Strikingly, despite their nanocrystalline nature, it is observed that the graphene films grown by MBE show an in-plane alignment to the substrate, revealing that a conventional epitaxial growth on the buffer layer takes place. The results will be discussed in the context of MBE growth of graphene considering the most recent data reported in the literature.