Regensburg 2013 – wissenschaftliches Programm
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TT: Fachverband Tiefe Temperaturen
TT 33: Topological Insulators 3 (jointly with HL, MA, and O)
TT 33.13: Vortrag
Mittwoch, 13. März 2013, 12:30–12:45, H16
Charge screening at the surface of a topological insulator: Rb on Bi2Se3 — •Peter Löptien, Lihui Zhou, Jens Wiebe, Alexander A. Khajetoorians, and Roland Wiesendanger — Institute of Applied Physics, University of Hamburg, Germany
Adsorption of Rb atoms on Bi2Se3 leads to the formation of a two-dimensional electron gas (2DEG) in the conduction band at the surface of the topological insulator [1]. We investigated the coverage dependent distribution of the singly charged Rb atoms by low temperature STM. By a statistical analysis of the interatomic distances between the adatoms we quantitatively derived the pair interaction [2], which fits a screened Coulomb potential. Interestingly, screening length and dielectric constant turn out to be rather small, due to the contribution of the 2DEG and topological surface state.
M. Bianchi, R. C. Hatch, Z. Li, P. Hofmann, F. Song, J. Mi, B. B. Iversen, Z. M. Abd El-Fattah, P. Löptien, L. Zhou, A. A. Khajetoorians, J. Wiebe, R. Wiesendanger, and J. W. Wells, ACS Nano 6, 7009 (2012)
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