Dresden 2014 – wissenschaftliches Programm

Bereiche | Tage | Auswahl | Suche | Aktualisierungen | Downloads | Hilfe

DF: Fachverband Dielektrische Festkörper

DF 27: Metamorphic structures: Bringing together incompatible materials II (Joint Focus Session with HL and DS)

DF 27.1: Topical Talk

Donnerstag, 3. April 2014, 15:00–15:30, POT 251

Integration of cubic III/V semiconductors on silicon (001) — •Kerstin Volz — Philipps-Universität Marburg, Fachbereich Physik & Wissenschaftliches Zentrum für Materialwissenschaften

GaP layers on Si(001) can serve as pseudo-substrates for a variety of novel optoelectronic devices, like integrated lasers, solar cells and n-channel layers. The quality of the GaP nucleation layer is a crucial parameter for the performance of such a device. This presentation will summarize our current understanding of III/V heteroepitaxy on Si substrates and give several examples of successful integration of multinary III/V semiconductors on GaP/Si(001) virtual substrates.