Dresden 2014 –
wissenschaftliches Programm
DS 34: Focus Session: Resistive Switching by Redox and Phase Change Phenomena V (Structure, growth and general properties of PC materials)
Mittwoch, 2. April 2014, 18:30–20:00, CHE 89
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18:30 |
DS 34.1 |
Hauptvortrag:
Materials engineering for phase change memory — •Simone Raoux and Huai-Yu Cheng
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19:00 |
DS 34.2 |
Application of the Mössbauer effect in Ge-Sb-Te and Sn-Sb-Te phase change materials — •Ronnie Ernst Simon, Ilya Sergueev, and Raphaël Pierre Hermann
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19:15 |
DS 34.3 |
Atomic resolution investigation of defect structures in textured metastable Ge2Sb2Te5 by aberration corrected high resolution STEM — •Ulrich Roß, Andriy Lotnyk, Erik Thelander, and Bernd Rauschenbach
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19:30 |
DS 34.4 |
Metal Organic Chemical Vapour Deposition of monocrystalline Ge1 Sb2 Te4 (GST) and Sb2 Te3 — •Martin Schuck, Sally Rieß, Marcel Schreiber, Gregor Mussler, Toma Stoica, Hilde Hardtdegen, and Detlev Grützmacher
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19:45 |
DS 34.5 |
Thermal annealing studies on GeSbTe alloy-films grown on Si(111) by Molecular Beam Epitaxy — •Valeria Bragaglia, Rui Ning Wang, Jos Boschker, and Raffaella Calarco
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