Dresden 2014 – scientific programme

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DS: Fachverband Dünne Schichten

DS 41: Focus Session: Sustainable Photovoltaics with Earth Abundant Materials II

DS 41.10: Talk

Thursday, April 3, 2014, 17:15–17:30, CHE 91

Radiative recombination in Cu2ZnGeSe4 single crystals — •Sergiu Levcenko¹, Maxim Guc², Steffen Kretzschmar¹, Ernest Arushanov², and Thomas Unold¹ — ¹Helmholtz Zentrum Berlin für Materialien und Energie, 14109 Berlin,Germany — ²Institute of Applied Physics, Academy of Sciences of Moldova, MD 2028 Chisinau, Moldova

Cu2ZnGeSe4 (CZGSe) is considered as a promising absorber material for thin film solar cells, owing to its high absorption coefficient and its optimum band gap for the sunlight spectrum. While structure and optical properties of CZGSe are studied, little is known about its electronic structure. To reveal intrinsic defect properties of this semiconductor we carried out photoluminescence spectroscopy on the CZGSe single crystals grown by chemical vapour transport. At low temperature two defect related transitions at about 1.2 and 1.3eV were observed. These transitions are systematically investigated by means of temperature and excitation dependent measurements and the defect recombination model has been proposed.