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DS: Fachverband Dünne Schichten
DS 41: Focus Session: Sustainable Photovoltaics with Earth Abundant Materials II
DS 41.10: Vortrag
Donnerstag, 3. April 2014, 17:15–17:30, CHE 91
Radiative recombination in Cu2ZnGeSe4 single crystals — •Sergiu Levcenko1, Maxim Guc2, Steffen Kretzschmar1, Ernest Arushanov2, and Thomas Unold1 — 1Helmholtz Zentrum Berlin für Materialien und Energie, 14109 Berlin,Germany — 2Institute of Applied Physics, Academy of Sciences of Moldova, MD 2028 Chisinau, Moldova
Cu2ZnGeSe4 (CZGSe) is considered as a promising absorber material for thin film solar cells, owing to its high absorption coefficient and its optimum band gap for the sunlight spectrum. While structure and optical properties of CZGSe are studied, little is known about its electronic structure. To reveal intrinsic defect properties of this semiconductor we carried out photoluminescence spectroscopy on the CZGSe single crystals grown by chemical vapour transport. At low temperature two defect related transitions at about 1.2 and 1.3eV were observed. These transitions are systematically investigated by means of temperature and excitation dependent measurements and the defect recombination model has been proposed.