Parts | Days | Selection | Search | Updates | Downloads | Help
DS: Fachverband Dünne Schichten
DS 44: Poster III: Focus session: Resistive switching by redox and phase change phenomena
DS 44.11: Poster
Thursday, April 3, 2014, 16:00–19:00, P1
Spectroscopic investigations of resistively switching Ta2O5−x thin films — •Oliver Peters1, Katharina Skaja1, Christoph Bäumer1, Regina Dittmann1, and Rainer Waser1,2 — 1Peter Grünberg Institut, Forschungszentrum Jülich GmbH, Jülich, 52425, Germany — 2Institut für Werkstoffe der Elektrotechnik II, RWTH Aachen University, Aachen, 52074,Germany
The subject of resistive switching in metal oxides and its utilisation in resistive random access memory (RRAM) has received abundant research interest during the last years.
Within the valence change memory (VCM) type of RRAM, Tantalum Oxide is one of the materials of choice, recently being introduced to the market. Thus, the proposed physical model of resistive switching in VCM, which is linked to the diffusion of oxygen vacancies and the formation of conducting filaments, has been analysed by different approaches. Although there are several publications dealing with the spectroscopic analysis of stacked structures, such as capacitors, the details of the chemical changes induced by electrical treatments at the electrode/Ta2O5−x interface are not completely understood so far.
Employing an in-situ electrode delamination technique, the electrode/Ta2O5−x interface was analysed by means of energy filtered photoelectron emission microscopy (PEEM). We will present characteristics of the low and high resistance state as well as non-switched areas of a Ta/Ta2O5−x/Pt stacked sample.