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DS: Fachverband Dünne Schichten

DS 44: Poster III: Focus session: Resistive switching by redox and phase change phenomena

DS 44.11: Poster

Donnerstag, 3. April 2014, 16:00–19:00, P1

Spectroscopic investigations of resistively switching Ta₂O_5−x thin films — •Oliver Peters¹, Katharina Skaja¹, Christoph Bäumer¹, Regina Dittmann¹, and Rainer Waser^1,2 — ¹Peter Grünberg Institut, Forschungszentrum Jülich GmbH, Jülich, 52425, Germany — ²Institut für Werkstoffe der Elektrotechnik II, RWTH Aachen University, Aachen, 52074,Germany

The subject of resistive switching in metal oxides and its utilisation in resistive random access memory (RRAM) has received abundant research interest during the last years.

Within the valence change memory (VCM) type of RRAM, Tantalum Oxide is one of the materials of choice, recently being introduced to the market. Thus, the proposed physical model of resistive switching in VCM, which is linked to the diffusion of oxygen vacancies and the formation of conducting filaments, has been analysed by different approaches. Although there are several publications dealing with the spectroscopic analysis of stacked structures, such as capacitors, the details of the chemical changes induced by electrical treatments at the electrode/Ta₂O_5−x interface are not completely understood so far.

Employing an in-situ electrode delamination technique, the electrode/Ta₂O_5−x interface was analysed by means of energy filtered photoelectron emission microscopy (PEEM). We will present characteristics of the low and high resistance state as well as non-switched areas of a Ta/Ta₂O_5−x/Pt stacked sample.