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09:30 |
DS 49.1 |
Hauptvortrag:
Synthesis, Characterization, and Application of Tunable Resistance Coatings — •Jeffrey W. Elam
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10:00 |
DS 49.2 |
ALD on Multi-Stacked Polystyrene Opals for Thermal Barrier Coatings — •Robert Zierold, Martin Waleczek, Josep M. Montero Moreno, Roman Kubrin, Hooi Sing Lee, Alexander Petrov, Manfred Eich, Gerold A. Schneider, and Kornelius Nielsch
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10:15 |
DS 49.3 |
New opportunities with Plasma enhanced atomic layer deposition (PE-ALD) of oxides — •Massimo Tallarida, Karsten Henkel, Hassan Gargouri, Jörg Häberle, Bernd Gruska, Matthias Arens, and Dieter Schmeisser
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10:30 |
DS 49.4 |
X-ray linear dichroism in atomic layer deposited Titanium dioxide layers — •Chittaranjan Das, Massimo Tallarida, and Dieter Schmeisser
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10:45 |
DS 49.5 |
Control of thickness of SiO2 interfacial layer for photocatalytic water splitting on Si photocathodes — •Chittaranjan Das, Massimo Tallarida, and Dieter Schmeisser
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11:00 |
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Coffee break (15 min)
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11:15 |
DS 49.6 |
Atomic layer deposition of SrxTi1−xOy: Stoichiometry variation and layer characterization — •Solveig Rentrop, Barbara Abendroth, Hartmut Stöcker, Ralph Strohmeyer, Jura Rensberg, Juliane Walter, and Dirk C. Meyer
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11:30 |
DS 49.7 |
Ta2O5 by thermal-activated ALD — •Marcel Junige, Ralf Tanner, Christian Wenger, Grzegorz Lupina, Matthias Albert, and Johann W. Bartha
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11:45 |
DS 49.8 |
Simulation of the deposition and growth of nano-crystalline MgF2 films via the low-temperature atom beam deposition method — Sridhar Neelamraju, •Johann Christian Schön, and Martin Jansen
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12:00 |
DS 49.9 |
Structural changes in HfO2 thin films: thickness and doping dependence — •Simone Brizzi, Massimo Tallarida, Christoph Adelmann, Lars-Ake Ragnasson, Sven Van Elshocht, and Dieter Schmeisser
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12:15 |
DS 49.10 |
Charging effect in HfO2 films deposited on SiO2/Si by atomic layer deposition — •Silma Alberton Correa, Simone Brizzi, Massimo Tallarida, and Dieter Schmeisser
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