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Berlin 2015 – scientific programme

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HL: Fachverband Halbleiterphysik

HL 23: Spintronics: Excitons and local spins (with MA/TT)

HL 23.8: Talk

Tuesday, March 17, 2015, 11:15–11:30, ER 270

Effect of electron spin inertia in II-VI semiconductors — •Fabian Heisterkamp1, Evgeny A. Zhukov1, Alex Greilich1, Vladimir L. Korenev1,2, Dmitri R. Yakovlev1,2, Alexander Pawlis3, Grzegorz Karczewski4, Tomasz Wojtowicz4, Jacek Kossut4, and Manfred Bayer11Experimentelle Physik 2, Technische Universität Dortmund, 44227 Dortmund, Germany — 2Ioffe Physical-Technical Institute, Russian Academy of Sciences, 194021 St. Petersburg, Russia — 3Department Physik, Universität Paderborn, 33098 Paderborn, Germany — 4Institute of Physics, Polish Academy of Sciences, 02668 Warsaw, Poland

An electron bound to a fluorine donor impurity in ZnSe has been considered as a good candidate for a quantum bit [1]. We study the spin relaxation time (T1) in fluorine-doped ZnSe epilayers using optical pump-probe spectroscopy. We fix the time-delay between pump and probe pulse and scan the magnetic field in Faraday geometry to measure the polarization recovery curve for different pump helicity modulation frequencies. While the spin polarization is able to reach its steady-state value for low modulation frequencies, the spins cannot be polarized completely, if the pump helicity changes too fast. We present a theoretical model for this effect of electron spin inertia. To test this approach we determine the spin relaxation time also for resident electrons in CdTe QWs. For further information on the optical properties of the samples we refer to Refs. [2] and [3]. [1] Sanaka et al., Phys. Rev. Lett. 103, 053601 (2009). [2] Greilich et al., Phys. Rev. B 85, 121303(R) (2012). [3] Zhukov et al., Phys. Rev. B 76, 205310 (2007).

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