Berlin 2015 – wissenschaftliches Programm

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TT: Fachverband Tiefe Temperaturen

TT 24: Focus Session: Functional Semiconductor Nanowires II (organized by HL)

TT 24.8: Vortrag

Montag, 16. März 2015, 17:30–17:45, EW 201

Influence of growth parameters on electrical transport characteristics in InAs Nanowires — •Jonathan Becker¹, Stefanie Morkötter¹, Phillip Geselbracht¹, Julian Treu¹, Simon Hertenberger¹, Max Bichler¹, Gerhard Abstreiter^1,2, Jonathan J. Finley¹, and Gregor Koblmüller¹ — ¹Walter Schottky Institut und Physik Department, TU München, Garching, Germany — ²Walter Schottky Institut and Physik Department, TU München, Garching, Germany

In this work we present recent results on the electrical transport of nominally undoped MBE grown InAs nanowires (NWs). In particular we explore the influence of growth parameters, microstructure, aspect ratio and contact metal on the electrical properties of the NWs. Four-terminal measurements on planar, back-gated NW field effect transistor (NWFET) devices revealed room-temperature mobilities ranging from 500 to 2000 cm²/Vs and on-off ratios of >10³ at 4.2K. The obtained electron densities are in the order of 10¹⁷cm⁻³. A strong effect of the diameter and the microstructure, altered by growth parameters, on the mobility was observed. The latter was investigated by HRTEM, simulations and temperature-dependent measurements in high detail. Here, the impact of band discontinuieties induced by stacking faults and WZ/ZB crystal phase boundaries on electron scattering is evaluated.