Regensburg 2016 – wissenschaftliches Programm

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DF: Fachverband Dielektrische Festkörper

DF 11: Poster

DF 11.23: Poster

Mittwoch, 9. März 2016, 18:00–20:00, Poster E

Domain walls in SrMnO3 thin films under epitaxial tensile strain — •Lokamani Lokamani¹, Carina Faber³, Peter Zahn¹, Nicola Spaldin³, and Sibylle Gemming^1,2 — ¹Institute of Ion Beam Physics and Materials Research, HZDR e.V., 01314 Dresden, Germany — ²Instiute of Physics, Technische Universität, 09107 Chemnitz, Germany — ³Materials Theory, ETH, 8093 Zürich, Switzerland

Strontium manganate (SrMnO₃), a perovskite polymorph, exhibits cubic structure at low temperatures, which transforms into a hexagonal one at high temperatures. Density-functional calculations showed earlier, that under tensile strain the ground state of bulk SrMnO3 corresponds to a G-type-antiferromagnetic (G-AFM) cubic structure. If deposited as epitaxially strained thin film a rearrangement of the MnO₆ coordination polyhedra was calculated, which is antiferrodistortive in the plane parallel to the substrate[1]. Recently, ferroelectric domains have been observed experimentally in thin films of SrMnO₃ (20nm) on (001)-oriented LSAT with a 1.7% tensile strain[2]. Strikingly, the domain walls were found to be electrically insulating, rendering the domains to form stable nano-capacitor.

Here, we present a first-principle investigation of the domain wall formation in thin films of SrMnO₃, their non-conductive behaviour and the effect of vacancies and defects on the conductance properties of such domain walls.

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C. Becher et. al., Nature Nanotechnology 10, 661 (2015).