Regensburg 2016 – wissenschaftliches Programm

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DS: Fachverband Dünne Schichten

DS 12: Postersession DS

DS 12.16: Poster

Montag, 7. März 2016, 17:00–19:00, Poster A

Evaluation of graphite defects by microscopic ellipsometry — •Shun Okano¹, Jana Kalbacova¹, Constance Schmidt¹, Christoph Günther¹, Raul D. Rodriguez¹, Elias Garratt², Babak Nikoobakht², Ovidiu D. Gordan¹, Angela R. Hight Walker³, and Dietrich R. T. Zahn¹ — ¹Technische Universität Chemnitz Semiconductor Physics, Chemnitz, 09126 — ²Materials Measurement Science Division, National Institute of Standards and Technology, Gaithersburg, MD 20899, USA — ³Semiconductor and Dimensional Metrology Division, National Institute of Standards and Technology, Gaithersburg, MD 20899, USA

Carbon materials, for instance graphite, graphene, or CNTs, are interesting for many modern applications. Therefore it is important to investigate defects in these materials. Since defects have a great effect on the properties of the material, like the refractive index, we focused on the investigation of defects by microscopic ellipsometry and compare the results with those from micro-Raman spectroscopy which is an established method for the characterization of defects. Defects on highly ordered pyrolytic graphite were produced by a focused Ga⁺ ion beam with ion fluence ranging from 3·10¹⁰ to 10¹⁵ ions/cm² in areas of 5×5 µm². The sample was investigated using an ellipsometry mapping, with an Accurion Nanofilm EP4 setup. With this we can visualize the defects the Ψ and Δ maps and determine the changes of refractive index and optical constants.