Regensburg 2016 – scientific programme
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DS: Fachverband Dünne Schichten
DS 12: Postersession DS
DS 12.3: Poster
Monday, March 7, 2016, 17:00–19:00, Poster A
Bi atoms mobility-driven self-organized circular domains at the Bi/InAs(111) interface — •Maria Christine Richter1,2, Abdoul Gafoor1, Laurent Nicolaï1,2,3, Jan Minar3,4, Jürgen Braun3, Hubert Ebert3, Uros Djukic1, Olivier Heckmann1,2, Jean-Michel Mariot5, Nick Barett2, Vitaly Feyer6,7, Claus M Schneider6, and Karol Hricovini1,2 — 1LPMS, Université de Cergy-Pontoise, Cergy-Pontoise, France — 2DSM/IRAMIS/SPEC, CEA Saclay, Gif-sur-Yvette, France — 3LMU Munich, Munich, Germany — 4University of West Bohemia, Czech Republic — 5LCP-MR, Université P et M Curie, Paris, France — 6Peter Grünberg Institute (PGI-6), JARA-FIT, Research Center Jülich, Jülich, Germany — 7NanoESCA beamline, Sincrotrone Trieste, Area Science Park, Basovizza, Italy
30 ML Thick Bi film deposition on the InAs(111)-A side and subsequent annealing at 600 K leads to self-organized circular structures with the diameter of several μm. Spatial analysis by PEEM of Bi 5d, In 4d and As 3d core-level photoemission spectra shows that the circular patterns are composed of the unaltered InAs substrate coverd by a thin Bi layer. The spots in the middle of the circles are Bi cristallites and the region in between them are In-poor and As-rich ternary compounds. From the k-resolved PEEM spectra along the Γ-Μ line we estimate that the medium thickness of the Bi-layer is approximately one monolayer. The InAs(111)-B side shows no particular morphology but stronger chemical shifts of the core-level spectra evidencing Bi-As bonds.