Bereiche | Tage | Auswahl | Suche | Aktualisierungen | Downloads | Hilfe

DS: Fachverband Dünne Schichten

DS 12: Postersession DS

DS 12.3: Poster

Montag, 7. März 2016, 17:00–19:00, Poster A

Bi atoms mobility-driven self-organized circular domains at the Bi/InAs(111) interface — •Maria Christine Richter^1,2, Abdoul Gafoor¹, Laurent Nicolaï^1,2,3, Jan Minar^3,4, Jürgen Braun³, Hubert Ebert³, Uros Djukic¹, Olivier Heckmann^1,2, Jean-Michel Mariot⁵, Nick Barett², Vitaly Feyer^6,7, Claus M Schneider⁶, and Karol Hricovini^1,2 — ¹LPMS, Université de Cergy-Pontoise, Cergy-Pontoise, France — ²DSM/IRAMIS/SPEC, CEA Saclay, Gif-sur-Yvette, France — ³LMU Munich, Munich, Germany — ⁴University of West Bohemia, Czech Republic — ⁵LCP-MR, Université P et M Curie, Paris, France — ⁶Peter Grünberg Institute (PGI-6), JARA-FIT, Research Center Jülich, Jülich, Germany — ⁷NanoESCA beamline, Sincrotrone Trieste, Area Science Park, Basovizza, Italy

30 ML Thick Bi film deposition on the InAs(111)-A side and subsequent annealing at 600 K leads to self-organized circular structures with the diameter of several μm. Spatial analysis by PEEM of Bi 5d, In 4d and As 3d core-level photoemission spectra shows that the circular patterns are composed of the unaltered InAs substrate coverd by a thin Bi layer. The spots in the middle of the circles are Bi cristallites and the region in between them are In-poor and As-rich ternary compounds. From the k-resolved PEEM spectra along the Γ-Μ line we estimate that the medium thickness of the Bi-layer is approximately one monolayer. The InAs(111)-B side shows no particular morphology but stronger chemical shifts of the core-level spectra evidencing Bi-As bonds.