Regensburg 2016 – wissenschaftliches Programm

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DS: Fachverband Dünne Schichten

DS 12: Postersession DS

DS 12.5: Poster

Montag, 7. März 2016, 17:00–19:00, Poster A

RBS-Investigations of Mo-doped BiVO₄ thin films deposited by reactive magnetron sputtering — •Marie Mende¹, Emanuel Schmidt¹, Fuxian Wang², Klaus Ellmer², and Elke Wendler¹ — ¹Institut für Festkörperphysik, Friedrich-Schiller-Universität Jena, Helmholtzweg 3, 07743 Jena, Germany — ²Helmholtz-Zentrum Berlin für Materialien und Energie, Hahn-Meitner-Platz 1, 14109 Berlin, Germany

Bismuth vanadate (BiVO₄) has recently emerged as a promising material for the use as photoanode in solar water splitting applications. However, the performance of BiVO₄ as photoanode material is strongly limited by its intrinsically slow electron and hole transport.

In order to overcome these limitations, novel doping strategies have been developed. To benefit from these modification and fabrication methods an extensive control of the composition and the dopant concentration must be guaranteed.

In this work we investigate molybdenum doped thin film samples of BiVO₄ deposited on glassy carbon or (100) yttria-stabilized zirconia (YSZ) substrates with different dopant contents by reactive magnetron sputtering from a Bi and a V target. Rutherford-Backscattering-Spectroscopy (RBS) is used to determine the structure (epitaxial growth) and composition of these layers for assisting further investigations regarding the dependence of photocatalytic activity on the material composition and doping.