Regensburg 2016 – wissenschaftliches Programm

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DS: Fachverband Dünne Schichten

DS 38: Topological Insulators
(Joint session of DS, HL, MA, O and TT, organized by MA)

DS 38.9: Vortrag

Mittwoch, 9. März 2016, 17:15–17:30, H32

Towards topological tunnel devices - A versatile method for processing tunnel junctions from high quality single crystals — •Robin Klett^1,2, Karsten Rott^1,2, Daniel Ebke³, Chandra Shekhar³, Joachim Schönle⁴, Wolfgang Wernsdorfer⁴, Stuart Parkin⁵, Claudia Felser^1,2, and Günter Reiss^1,2 — ¹Physics Department, Bielefeld University, Germany — ²Center for Spinelectronic Materials and Devices, Universitätsstraße 25, 33605 Bielefeld, Germany — ³Max-Planck Institute for Chemical Physics of Solids, 01187 Dresden, Germany — ⁴CNRS, Institut NEEL and Univ. Grenoble Alpes, F-38000 Grenoble, France — ⁵Max Planck Institute for Microstructure Physics, 06120 Halle/Saale, Germany

We present a new and versatile concept for devices based on topological materials. To maintain their topological character high quality samples with clean interfaces to adjacent functional device components are mandatory. This requirement forms a bottleneck of current research, because very often the established thin film deposition fails to produce such high quality samples and bare surfaces of single crystals lack the necessary flatness. We demonstrate a novel, all-in-ultrahigh-vacuum process that enables to realize, e.g. tunnel junctions, Andreev contacts or SQUID rings from single crystalline bulk material. The validity of the technique is verified and illustrated with tunnel junctions made from cleaved single crystals of the half-Heusler topological superconductor candidate YPtBi.