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Regensburg 2016 – scientific programme

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DS: Fachverband Dünne Schichten

DS 48: Oxide Semiconductors for Device and Energy Applications II
(Joint session of DS and HL, organized by DS)

DS 48.7: Talk

Thursday, March 10, 2016, 16:30–16:45, H11

Oxygen Vacancies in the Ultrathin SiO2 Interfacial Layer of High-K/Metal Gate CMOS Devices — •Florian Lazarevic1,2, Roman Leitsmann1,2, Philipp Plänitz1, and Michael Schreiber21MATcalc, AQcomputare GmbH, Annaberger Str. 240, 09125 Chemnitz, Germany — 2Institute of Physics, Chemnitz University of Technology, 09107 Chemnitz, Germany

We study oxygen vacancy defect levels in ultrathin SiO2 layers in metal-oxide-semiconductor devices. First principles calculations were performed to model a Si/SiO2/HfO2 gate stack and a SiO2 bulk reference system. The extremely thin SiO2 layer thickness and dissimilar structural and electronic properties of the adjacent layers (namely Si and HfO2) result in a degeneration and stabilization of certain SiO2 bulk defects. We find that partial H passivation of the vacancies additionally stabilizes defects energetically which are related to the leakage current in CMOS devices. Furthermore the incorporation of F atoms has a large influence on the stability of H passivated SiO2 defects.

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