Regensburg 2016 – wissenschaftliches Programm

Bereiche | Tage | Auswahl | Suche | Aktualisierungen | Downloads | Hilfe

HL: Fachverband Halbleiterphysik

HL 92: Postersession DS/HL

HL 92.37: Poster

Donnerstag, 10. März 2016, 16:00–19:00, Poster A

Growth morphologies of a polar pentacene derivative on SiO₂ and graphene — •Benjamin Kaufmann¹, Markus Kratzer¹, Tony Lelaidier², Olivier Siri², Aleksandar Matković³, Radoš Gajić³, Conrad Becker², and Christian Teichert¹ — ¹Institute of Physics, Montanuniversitaet Leoben, Franz Josef Straße 18, 8700 Leoben, Austria — ²CINaM, Aix Marseille Université, Campus de Luminy Case 913, 13288 Marseille, France — ³Institute of Physics, Department for Solid State Physics and New Materials, University of Belgrade, Pregrevica 118, 11080 Belgrade, Serbia

We investigated the growth morphologies of the polar organic molecule dihydrotetraazapentacene (DHTAP) on SiO₂ and exfoliated graphene. The morphology of ultra-thin films grown by hot wall epitaxy was analyzed using atomic force microscopy. The morphologies arising between 290K - 390K exhibit a strong temperature dependence and differ from those found for pentacene. Above substrate temperatures of 330K, the molecules tend to build curved, needle-like structures with lengths of 50nm - 1000nm and heights of a few nanometers. At lower growth temperatures, no needles are present as it is also the case for pentacene growth on SiO₂. On graphene, the islands are reduced in height compared to those grown on SiO₂. Also here, needle-like structures were found.